Samsung Engineering announced that the company signed the contract on December 4th(local time) to carry out its $770 million Terengganu Gas Terminal (TGAST) Development Project from Petronas Carigali Sdn Bhd (PCSB), a subsidiary of Malaysia’s state-owned entity Petronas and Hess Exploration and Production Malaysia B.V.(HESS), a subsidiary of the US energy company. PCSB and HESS respectively hold 75% and 25% of the project’s stake.
On the day of signing, which took place in Kuala Lumpur, Malaysia’s capital city, Samsung Engineering’s CEO Park Choong-Heum and PCSB’s CEO Datuk Mohd Anuar Taib, HESS’s Asia-Pacific Vice President Sauu Kakok were present.
The gas pretreatment facility will be built in Kerteh Complex, Terengganu region, 260km northeast from the capital Kuala Lumpur. This plant will eliminate impurities such as carbon dioxide (CO2) and hydrogen sulfide (H2S) from natural gas extracted offshore, producing gas at a large-scale of 700 million cubic feet per day (700 MMSCFD). Samsung Engineering received the Letter of Award (LOA) last September for the project which will be conducted on a Lump Sum Turn Key (LSTK) basis for engineering, procurement, construction, and commissioning. The project is expected to reach its completion in June 2016.
Samsung Engineering’s CEO Park Choong-Heum commented: “It was the trust built upon the positive project outcomes and affluent experience in gas plant industry that led to the awarding of the contract. We will enhance the partnership with the client by successfully completing the project, and strengthen our position in the Southeast Asian market.”
About Samsung Engineering
Founded in 1970, Samsung Engineering has grown from a modest domestic engineering firm to a globally recognized name in the EPC market. Attracting talent from around the world, Samsung Engineering has broadened its business portfolio to a full range of engineering services: upstream and downstream hydrocarbon facilities; power plants; water and waste treatment plants; and industrial production facilities.